发明名称 Non-volatile memory cell read failure reduction
摘要 The present disclosure includes various method, device, and system embodiments for reducing non-volatile memory cell read failures. One such method embodiment includes performing a first read operation, using an initial read potential, to determine a state of a selected memory cell in a string of non-volatile memory cells. This method includes determining whether the state of the selected memory cell is an incorrect state by performing a first check using a data checking technique, and if the incorrect state is determined, performing a number of subsequent read operations using read potentials stepped to a higher and a lower read potential to a particular count of read operations.
申请公布号 US7450425(B2) 申请公布日期 2008.11.11
申请号 US20060512500 申请日期 2006.08.30
申请人 MICRON TECHNOLOGY, INC. 发明人 ARITOME SEIICHI
分类号 G11C11/34 主分类号 G11C11/34
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