发明名称 |
High voltage operating electrostatic discharge protection device |
摘要 |
A high voltage operating electrostatic discharge protection device is provided. The high voltage operating electrostatic discharge protection device includes: a first gate structure and a second gate structure disposed on a substrate of a first conductive type with a predetermined distance; a well of the first conductive type formed in a first region of the substrate such that the well contacts one bottom portion of the first gate structure; a source region of a second conductive type formed within in the well; a counter pocket source region of the first conductive type formed within the well encompassing the source region; and a drift region of the second conductive type contacting a bottom surface of the second gate structure and formed in a second region of the substrate such that the drift region contacts the other bottom portion of the first gate structure.
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申请公布号 |
US7449751(B2) |
申请公布日期 |
2008.11.11 |
申请号 |
US20050222372 |
申请日期 |
2005.09.07 |
申请人 |
MAGNACHIP SEMICONDUCTOR, LTD. |
发明人 |
KIM KIL-HO |
分类号 |
H01L23/62 |
主分类号 |
H01L23/62 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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