发明名称 High voltage operating electrostatic discharge protection device
摘要 A high voltage operating electrostatic discharge protection device is provided. The high voltage operating electrostatic discharge protection device includes: a first gate structure and a second gate structure disposed on a substrate of a first conductive type with a predetermined distance; a well of the first conductive type formed in a first region of the substrate such that the well contacts one bottom portion of the first gate structure; a source region of a second conductive type formed within in the well; a counter pocket source region of the first conductive type formed within the well encompassing the source region; and a drift region of the second conductive type contacting a bottom surface of the second gate structure and formed in a second region of the substrate such that the drift region contacts the other bottom portion of the first gate structure.
申请公布号 US7449751(B2) 申请公布日期 2008.11.11
申请号 US20050222372 申请日期 2005.09.07
申请人 MAGNACHIP SEMICONDUCTOR, LTD. 发明人 KIM KIL-HO
分类号 H01L23/62 主分类号 H01L23/62
代理机构 代理人
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