发明名称 Pattern registration mark designs for use in photolithography and methods of using the same
摘要 Pattern registration marks which include: a substrate and an upper material layer disposed above the substrate; an outer trench formed in the upper material layer, the outer trench having an outer trench width; an inner trench formed in the upper material layer, the inner trench having an inner trench width; and a conformal layer disposed in the inner trench and the outer trench, the conformal layer having a conformal layer thickness; wherein the outer trench width is greater than twice the conformal layer thickness, and wherein the inner trench width is less than or equal to twice the conformal layer thickness; and methods of using the same.
申请公布号 US7449792(B2) 申请公布日期 2008.11.11
申请号 US20060410424 申请日期 2006.04.25
申请人 MACRONIX INTERNATIONAL CO., LTD. 发明人 YANG CHIN CHENG;HUANG CHIH HAO
分类号 H01L23/544;H01L21/76 主分类号 H01L23/544
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