| 摘要 |
A semiconductor laser device includes an edge-emitting laser monolithically integrated with a diffractive lens formed on the chip surface to emit a focalized or collimated beam in a direction perpendicular to the surface. An upper reflective surface and an angled reflective surface are formed in the chip upper surface. A lower reflective surface is formed in the chip lower surface. The laser, angled reflective surface, upper reflective surface, lower reflective surface and diffractive lens are oriented in relation to one another so that a first portion of the light emitted by the laser impinges directly upon the upper reflective surface, which reflects it onto the angled reflective surface, while a second portion of the light emitted by the laser impinges directly upon the angled reflective surface. The angled reflective surface reflects the light portions onto the lower reflective surface, which in turn reflects them through the diffractive lens.
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