Wavelength locked laser including integrated wavelength selecting total internal reflection (TIR) structure

摘要

An integrated light emitting semiconductor device having integrated feedback for wavelength locking comprises a semiconductor substrate including a waveguide region having a gain section having a gain media therein, and an out-coupling perturbation integrated with the device disposed proximate to the waveguide. A total internal reflection (TIR) structure for providing optical feedback is integrated with the device and disposed in a spaced apart relation relative to the out-coupling perturbation. At least one of the out-coupling perturbation and the TIR structure include a grating or prism to provide dispersion to send different wavelengths of light in different directions. The out-coupling perturbation is preferably a grating that has a grating period that is small enough to allow for only the +1 diffracted order to propagate.