发明名称 Memory system, a memory device, a memory controller and method thereof
摘要 The memory system, memory device, memory controller and method may have a reduced power consumption. The memory system, memory device, memory controller and method may transition a data strobe signal to a valid logic level during a standby state. The valid logic level may be less than a logic level associated with a higher impedance level, such as when a bus may be turned off or connected to a ground voltage. A delay locked circuit need not be used in the memory device.
申请公布号 US7450441(B2) 申请公布日期 2008.11.11
申请号 US20050266383 申请日期 2005.11.04
申请人 SAMSUNG ELECTRONICS CO, LTD 发明人 LEE DONG-YANG
分类号 G11C7/00 主分类号 G11C7/00
代理机构 代理人
主权项
地址