发明名称 |
Methods of operating non-volatile memory cells having an oxide/nitride multilayer insulating structure |
摘要 |
A method of operating a memory cell by applying a positive voltage to the gate sufficient to cause hole tunneling from the gate toward the charge storage layer is disclosed. The method is applied to a memory cell including a semiconductor layer having at least two source/drain regions disposed below a surface of the semiconductor layer and separated by a channel region. The memory cell also has a lower insulating layer disposed above the channel region; a charge storage layer disposed above the lower insulating layer; an upper insulating multi-layer structure disposed above the charge storage layer. The upper insulating multi-layer structure comprises a lower dielectric layer and an upper nitride layer disposed above the lower dielectric layer and the memory cell has a gate disposed above the upper insulating multi-layer structure.
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申请公布号 |
US7450423(B2) |
申请公布日期 |
2008.11.11 |
申请号 |
US20070649348 |
申请日期 |
2007.01.03 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
LAI ERH-KUN;SHIH YEN-HAO;HSU TZU-HSUAN;LEE SHIH-CHIH;HSIEH JUNG-YU;HSIEH KUANG-YEU |
分类号 |
G11C11/34;G11C16/06;H01L29/94 |
主分类号 |
G11C11/34 |
代理机构 |
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地址 |
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