Semiconductor device

摘要

The invention is directed to a method for manufacturing a field plate of a high voltage device. The field plate is located on a drift region of a substrate, wherein an isolation structure is located on the drift region. The method comprises steps of forming a first dielectric layer over the substrate and then forming a first patterned conductive layer on the first dielectric layer, wherein the first patterned conductive layer is located over the isolation structure and exposes a portion of a top surface of the first dielectric layer. The exposed portion of the first dielectric layer is removed until a top surface of the isolation structure so as to form a plurality of vertical fin-type dielectric bottoms.