发明名称 |
Overvoltage-protected light-emitting semiconductor device |
摘要 |
An LED incorporating an overvoltage protector with a minimum of space requirement. The LED itself comprises a p-type semiconductor substrate, a light-generating semiconductor region grown epitaxially thereon, a first electrode on the light-generating semiconductor region, and a second electrode on the underside of the substrate. The standard method of LED fabrication is such that the substrate is notionally divisible into a main portion in register with the overlying light-generating semiconductor region and, surrounding the main portion, a tubular marginal portion needed for dicing the wafer into individual squares or dice. The overvoltage protector comprises an n-type semiconductor film formed on the marginal portion of the substrate and held against the side surfaces of the light-generating semiconductor region via an insulating film. Creating a pn junction with the marginal portion of the p-type substrate, the n-type semiconductor film provides an overvoltage protector diode which is electrically connected reversely in parallel with the LED. Various other embodiments are disclosed.
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申请公布号 |
US7449727(B2) |
申请公布日期 |
2008.11.11 |
申请号 |
US20060343798 |
申请日期 |
2006.01.31 |
申请人 |
SANKEN ELECTRIC CO., LTD. |
发明人 |
SATO JUNJI;TAZIMA MIKIO;MOKU TETSUJI;NIWA AREI;KAMII YASUHIRO |
分类号 |
H01L31/0328;H01L33/32;H01L31/0336;H01L31/072;H01L31/109;H01L33/42;H01L33/44 |
主分类号 |
H01L31/0328 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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