| 发明名称 |
INTEGRATED III-NITRIDE POWER DEVICES |
| 摘要 |
A III-nitride based integrated semiconductor device which includes at least two III-nitride based semiconductor devices formed in a common die. |
| 申请公布号 |
KR100868103(B1) |
申请公布日期 |
2008.11.11 |
| 申请号 |
KR20067016011 |
申请日期 |
2006.08.08 |
| 申请人 |
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发明人 |
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| 分类号 |
H01L31/072;H01L21/336;H01L27/06;H01L29/20;H01L29/872 |
主分类号 |
H01L31/072 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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