| 摘要 |
A method of the manufacturing the “silicon-on-insulator” structures includes successive formation on the silicon plate of a layer of insulator, opening in it of windows for contacts-nuclei of polysilicon with plate, application of a layer of polysilicon, encapsulating and antireflecting coatings in the form of strips from silicon nitride and subsequent laser recrystallization of the layer of poly-silicon by scanning by laser beam. The layer of insulator is formed by combined successive application of two films from thermal oxide of silicon or silicon oxynitride and film of silicon nitride, in which the windows for contacts-nuclei with silicon plate are formed. The first part of the layer of polysilicon with a thickness of 0.1-0.2 μm is precipitated, the sublayer is processed in the oxidizing etching agent with subsequent high-temperature annealing in the neutral medium of nitrogen or argon. The second part of the layer of polysilicon with a thickness of 0.2-0.4 μm is precipitated with simultaneous planarization of the surface, the combined encapsulating coating is applied from the films of silicon nitride and pyrolytic oxide of silicon, with overall thickness of 0.55 μm, and antireflecting coating from the film of silicon nitride with a thickness of 0.1 μm, the topology of the elements of antireflecting coating is formed in it. In this case the topology of contact windows for nuclei matches the topology of the elements of antireflecting coating, after which laser recrystallization of the layer of polysilicon is conducted. |
