| 摘要 |
The semiconductor device and a method of formation thereof are provided to secure the electrostatic capacity which is sufficient for the high integration of the semiconductor device by connecting the capacitors into parallel connection. The semiconductor device includes the metal oxide semiconductor type reservoir capacitor in the peripheral circuit section(200) of the semiconductor substrate; the capacitor type reservoir capacitor on the peripheral circuit section connected in parallel with the metal oxide semiconductor type reservoir capacitor. The metal oxide semiconductor type reservoir capacitor is formed with the recessed gate structure.
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