| 摘要 |
The manufacturing method of the semiconductor device is provided to secure the margin available of the etching process for the following open area formation by reducing the step difference between the peripheral structure and the storage node contact plug. The manufacturing method of the semiconductor device includes the step of forming the insulating layer in which the storage node contact hole is equipped on the substrate; the step of forming the conductive film in the front side it fills the storage node contact hole; the step of forming the storage node contact plug inside the storage node contact hole; the step of for forming sacrificing layer(24A) in the front side including storage node contact plug(23); the step of planarizing the surface of the sacrificing layer; the step of removing a part the insulating layer neighboring with the storage node contact plug.
|
