| 摘要 |
Disclosed is a power semiconductor device wherein a reaction hardly occurs between a metal material of wiring and an electrode or the like connected to a semiconductor region during high temperature operations. In this power semiconductor device, strain is hardly generated during high temperature operations. Specifically disclosed is a power semiconductor device such as an SiC power device wherein a first metal layer (14) containing at least one of Pt, Ti, Mo, W and Ta is formed on a source electrode (11) which is formed on a semiconductor region such as a source region (4). A second metal layer (15) containing at least one of Mo, W and Cu is formed on the first metal layer (14). A third metal layer (16) containing at least one of Pt, Mo and W is formed on the second metal layer (15).
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