发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <p>When the device forming layer including semiconductor device is peeled off, discharge by the static electricity generated by exfoliation is suppressed. The peeling layer(12) and the device forming layer(11) are formed on the substrate(10). The peelable support base(13) is fixed on the upper side of the device forming layer. The support base is interposed. The device forming layer is transformed. Exfoliation is generated in the interface of the peeling layer and device forming layer. Exfoliation is performed while wetting the device forming layer and the peeling layer with a liquid like pure water. Electric charges on the surface of the peeling layer and device forming layer generated by the liquid are diffused. Discharge by the release electrification can be removed.</p>
申请公布号 KR20080098344(A) 申请公布日期 2008.11.07
申请号 KR20080102326 申请日期 2008.10.20
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 EGUCHI SHINGO;MONMA YOHEI;TANI ATSUHIRO;HOSAKA YASUHARU;HASHIMOTO KENICHI;HIROSUE MISAKO
分类号 H01L27/12;G02F1/13;H01L29/786 主分类号 H01L27/12
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