| 摘要 |
<p>A method for fabricating a semiconductor device is provided to improve the adhesion property by interposing the tacky film at an interval between the amorphous carbon layer and metal layer. A method for fabricating a semiconductor device includes the step for forming the metal layer(102) on the substrate(101); the step for forming the tacky film(103) on the metal layer; the step for forming the amorphous carbon layer(104) pattern on the tacky film; the step for etching the tacky film to the etching barrier wall the amorphous carbon layer pattern; the step for etching the metal layer to the etching barrier wall the tacky film.</p> |
