| 发明名称 |
AMORPHOUS OXIDE SEMICONDUCTOR, SEMICONDUCTOR DEVICE, AND THIN FILM TRANSISTOR |
| 摘要 |
<p>An amorphous oxide semiconductor contains at least one element selected from In, Ga, and Zn at an atomic ratio of In<SUB>x</SUB>Ga<SUB>y</SUB>Zn<SUB>z</SUB>, wherein the density M of the amorphous oxide semiconductor is represented by the relational expression (1) below: M = 0.94 x (7.121x+5.941y+5.675z)/(x+y+z) (1) where 0=x=1, 0=y=1, 0=z=1, and x+y+z?0.</p> |
| 申请公布号 |
WO2008133220(A1) |
申请公布日期 |
2008.11.06 |
| 申请号 |
WO2008JP57648 |
申请日期 |
2008.04.15 |
| 申请人 |
CANON KABUSHIKI KAISHA;YABUTA, HISATO;ENDO, AYANORI;KAJI, NOBUYUKI;HAYASHI, RYO |
发明人 |
YABUTA, HISATO;ENDO, AYANORI;KAJI, NOBUYUKI;HAYASHI, RYO |
| 分类号 |
H01L29/786;H01L29/24 |
主分类号 |
H01L29/786 |
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