发明名称 |
A TECHNIQUE FOR ENHANCING TRANSISTOR PERFORMANCE BY TRANSISTOR SPECIFIC CONTACT DESIGN |
摘要 |
<p>By locally adapting the size and/or density of a contact structure (230A, 230B), for instance, within individual transistors (210, 210A, 210B) or in a more global manner, the overall performance of advanced semiconductor devices (200) may be increased. Hence, the mutual interaction between the contact structure (230A, 230B) and local device characteristics may be taken into consideration. On the other hand, a high degree of compatibility with conventional process strategies may be maintained.</p> |
申请公布号 |
WO2008133832(A1) |
申请公布日期 |
2008.11.06 |
申请号 |
WO2008US04958 |
申请日期 |
2008.04.17 |
申请人 |
ADVANCED MICRO DEVICES, INC.;GERHARDT, MARTIN;RICHTER, RALF;FEUDEL, THOMAS;GRIEBENOW, UWE |
发明人 |
GERHARDT, MARTIN;RICHTER, RALF;FEUDEL, THOMAS;GRIEBENOW, UWE |
分类号 |
H01L29/78;H01L21/336;H01L21/8238;H01L23/528;H01L29/417 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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