LIQUID FOR LIQUID IMMERSION EXPOSURE AND PATTERN FORMING METHOD

摘要

PROBLEM TO BE SOLVED: To enable the formation of a pattern having a bad profile to be prevented by further enhancing resolution resulting from liquid immersion lithography.

SOLUTION: This liquid 203 for liquid immersion exposure located between a resist film 202 formed on a substrate 201 and a projection lens 205 in order to enhance the value of a numerical aperture is produced by adding a carbonyl group or a sulfonyl group containing molecules having a polarity higher than that of water to a solvent. Since this allows refractive index of the liquid 203 to be increased and resolution to be enhanced without imposing any burden on the projection lens 205, a resist pattern having a good profile can be attained.

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