| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which is equipped with a capacitance element in the same semiconductor device to make the overall device compact, the capacitance element having larger electrostatic capacity than conventionally. <P>SOLUTION: A semiconductor integrated circuit 1 and a pad electrode 4 are formed on the top surface of a semiconductor substrate 2. A second insulating film 10 is formed on a flank and a reverse surface of the semiconductor substrate 2, and a capacity electrode 9, which is in contact with the reverse surface of the semiconductor substrate 2, is formed between the reverse surface of the semiconductor substrate 2 and the second insulating film 10. The second insulating film 10 is covered with a wiring layer 11 electrically connected to the pad electrode 4, and the wiring layer 11 and capacity electrode 9 overlap each other, via the second insulating film 10 interposed. Accordingly, a capacitor 16 is formed of the capacity electrode 9, the second insulating film 10 and the wiring layer 11. <P>COPYRIGHT: (C)2009,JPO&INPIT |
