发明名称 INFRARED RAY TRANSMITTING STRUCTURE AND INFRARED RAY SENSOR
摘要 <P>PROBLEM TO BE SOLVED: To provide an infrared-transparent structure excellent in shock resistance, peeling resistance and transmittance. <P>SOLUTION: The infrared-transparent structure is characterized in that a first Y<SB>2</SB>O<SB>3</SB>layer, a YF<SB>3</SB>layer, a second Y<SB>2</SB>O<SB>3</SB>layer and a diamond-like carbon layer are laminated in the order from a substrate surface on the surface side of a substrate made of ZnS. The infrared-transparent structure is characterized in that the first Y<SB>2</SB>O<SB>3</SB>layer has a thickness of 10 to 200 nm, the YF<SB>3</SB>layer has a thickness of 400 to 800 nm, the second Y<SB>2</SB>O<SB>3</SB>layer has a thickness of 10 to 200 nm and the diamond-like carbon layer has a thickness of 100 to 500 nm. The infrared-transparent structure is characterized in that a Ge layer is further laminated between the second Y<SB>2</SB>O<SB>3</SB>layer and the diamond-like carbon layer. The infrared-transparent structure is characterized in that a Y<SB>2</SB>O<SB>3</SB>layer, a YF<SB>3</SB>layer and an MgF<SB>2</SB>layer is laminated in the order from the surface on the back surface side of the substrate made of ZnS. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008268277(A) 申请公布日期 2008.11.06
申请号 JP20070107280 申请日期 2007.04.16
申请人 SEI HYBRID KK 发明人 KINOSHITA SHIGENORI;NAKAYAMA SHIGERU
分类号 G02B1/11;G01J1/02;G01J1/04 主分类号 G02B1/11
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