| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing, with a high yield, a reliable semiconductor device that cannot be destroyed by pressure applied locally from outside. <P>SOLUTION: A semiconductor device is manufactured by forming an element substrate having a semiconductor element formed by a single-crystal semiconductor substrate or an SOI substrate, or a single-crystal substrate or an SOI substrate, providing the fibrous body of an organic or inorganic compound on the element substrate, applying a composition including an organic resin from the element substrate and the fibrous body, and forming a sealing layer, where the fibrous body of the organic or inorganic compound is impregnated with the organic resin, on the element substrate by heating. <P>COPYRIGHT: (C)2009,JPO&INPIT |
