| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon dioxide precursor and a silicon dioxide precursor composition useful for forming a high purity silicon dioxide film containing no organic component. SOLUTION: The silicon dioxide precursor is a silicone resin that is represented by the rational formula (1) (H<SB>2</SB>SiO)<SB>n</SB>(HSiO<SB>1.5</SB>)<SB>m</SB>(SiO<SB>2</SB>)<SB>k</SB>, wherein each n, m and k represents a number, and when n+m+k=1, n is not less than 0.05, m is over 0 to 0.95 and k is from 0 to 0.2, and that is solid at 120°C. The silicon dioxide precursor composition contains the above silicone resin and an organic solvent. COPYRIGHT: (C)2009,JPO&INPIT |
