发明名称 MULTILAYER SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a multilayer semiconductor device exhibiting superior mountability by eliminating the curvature points of inflection and reducing warpage, when upper and lower semiconductor devices are stacked. SOLUTION: A connection terminal 8 for restraining curvature is provided in a region of the resin substrate 2 of an upper layer semiconductor device to be stacked, wherein the region forces a semiconductor element mounted on a lower layer semiconductor device. Thus, inflection point is eliminated and warpages are reduced when the upper and lower semiconductor devices are stacked and completed, even if a warge occurs in the semiconductor element mounting region of the lower layer semiconductor device after melting solder, by restraining warpage forcibly from the upper surface, resulting in a multilayer semiconductor device that exhibits superior mountability. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008270303(A) 申请公布日期 2008.11.06
申请号 JP20070107661 申请日期 2007.04.17
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 KAWABATA TAKESHI;OMORI HIROHARU
分类号 H01L25/065;H01L25/07;H01L25/18 主分类号 H01L25/065
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