| 摘要 |
PROBLEM TO BE SOLVED: To improve efficiency of code configuration by matching the code configuration of a burst error correction code with the number of input/output of PRAM, ReRAM and a solid electrolyte memory. SOLUTION: The semiconductor memory device uses an error correction code which comprises a plurality of symbols, in which each symbol comprises a plurality of bits, and which can correct an error in a symbol unit for error detection and error correction. The semiconductor memory device is provided with a plurality of memory cells including any of a phase transition resistance element, metal oxide resistance element, or solid electrolyte resistance element, and peripheral circuits (3 to 7). The memory cell includes a first data cell (11) storing a part of bits of the data symbols. The peripheral circuits (3 to 7) reads out the part of bits from the first data cell (11), reproduces the data symbol by adding the prescribed dummy bit to the part of bits, and performs error detection and error correction using the reproduced data symbol. COPYRIGHT: (C)2009,JPO&INPIT |
