发明名称 THIN FILM TRANSISTOR ARRAY SUBSTRATE, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a highly reliable thin film transistor array substrate. SOLUTION: A thin film transistor array substrate comprises: an island-like semiconductor layer 3 formed on a substrate 1; conductive patterns 4 formed on a source region 31 and a drain region 32; a gate electrode 6 disposed on a counter face of a channel region 33 via a gate insulating film 5; an interlayer insulating film 7; source wiring 44 formed on the interlayer insulating film 7; a protecting film 8; a pixel electrode 10 connected to the conductive pattern 4 on the drain region 32 via a contact hole 9; and a connection pattern 11 formed from the same layer as the pixel electrode 10 and connected to the source wiring 44 and the conductive pattern 4 on the source region 31 via the contact hole 9, wherein the conductive pattern 4 is disposed while deviating its end portion inside from a pattern end portion in the semiconductor layer 3 by a first distance t2 or more. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008270613(A) 申请公布日期 2008.11.06
申请号 JP20070113338 申请日期 2007.04.23
申请人 MITSUBISHI ELECTRIC CORP 发明人 IRIZUMI TOMOYUKI
分类号 H01L29/786;G02F1/1362;G09F9/30;H01L21/768 主分类号 H01L29/786
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