发明名称 |
PHASE CHANGE DIODE MEMORY |
摘要 |
An integrated circuit having a memory includes a semiconductor line and a phase change element contacting the semiconductor line. The phase change element provides a storage location. A diode junction is formed at the interface between the semiconductor line and the phase change element.
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申请公布号 |
US2008272354(A1) |
申请公布日期 |
2008.11.06 |
申请号 |
US20070744460 |
申请日期 |
2007.05.04 |
申请人 |
NIRSCHL THOMAS;HAPP THOMAS |
发明人 |
NIRSCHL THOMAS;HAPP THOMAS |
分类号 |
H01L29/02;H01L21/00 |
主分类号 |
H01L29/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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