发明名称 PHASE CHANGE DIODE MEMORY
摘要 An integrated circuit having a memory includes a semiconductor line and a phase change element contacting the semiconductor line. The phase change element provides a storage location. A diode junction is formed at the interface between the semiconductor line and the phase change element.
申请公布号 US2008272354(A1) 申请公布日期 2008.11.06
申请号 US20070744460 申请日期 2007.05.04
申请人 NIRSCHL THOMAS;HAPP THOMAS 发明人 NIRSCHL THOMAS;HAPP THOMAS
分类号 H01L29/02;H01L21/00 主分类号 H01L29/02
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