SILICON CRYSTAL MATERIAL AND METHOD FOR MANUFACTURING FZ SILICON SINGLE CRYSTAL BY USING THE SAME

摘要

Provided is a silicon crystal material which has dislocation or is polycrystalline, and is manufactured by a CZ method. The silicon crystal material is used as a material bar for FZ single crystal manufacture, does not generate cracks and breakage, and has a section to be grasped for being suspended and held in an FZ furnace. The silicon crystal material to be used for manufacturing silicon single crystal by an FZ method is provided with a silicon seed crystal section, which has dislocation or is polycrystalline and is manufactured by the CZ method; a shoulder section, which is crystal-grown from the seed crystal section and has a gradually increasing diameter; a cylindrical straight body section; and a tail section wherein the diameter gradually reduces. Prior to taking out the material from the furnace after being crystal-grown in the CZ furnace, a cooling step is performed to cool the material to a prescribed temperature for a prescribed time. The residual stress at 300°C or below is 0.6MPa or less.