| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent reaction between semiconductor material and metal in a light emitting diode element. <P>SOLUTION: The invention relates to a structure of a light emitting diode including a substrate, a first conductivity semiconductor layer formed on the substrate, a light emitting layer formed on the first conductivity semiconductor layer, a second conductivity semiconductor layer formed on the light emitting layer, a barrier layer formed on the second conductivity semiconductor layer, and a contact layer formed on the barrier layer. The barrier layer is used for avoiding diffusion of the metal of the contact layer into the second conductivity semiconductor layer. <P>COPYRIGHT: (C)2009,JPO&INPIT |
