| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma doping method and apparatus which have excellent reproducibility of the concentration of impurities introduced into the surfaces of samples. <P>SOLUTION: In a vacuum container 1, in a state where gas is ejected toward a substrate 7 placed on a sample electrode 6 through gas ejection holes 5 provided in a counter electrode 3, gas is exhausted from the vacuum container through a turbo molecular pump 8 as an exhaust device, and the inside of the vacuum container 1 is maintained at a predetermined pressure through a pressure adjustment valve 9, the distance between the counter electrode 3 and the sample electrode 6 is set to be sufficiently small with respect to the area of the counter electrode 3 to prevent plasma from being diffused outward, and capacitive-coupled plasma is generated between the counter electrode 3 and the sample electrode 6 to perform plasma doping. The gas used herein is a gas with a low concentration which contains impurities such as diborane or phosphine. <P>COPYRIGHT: (C)2009,JPO&INPIT |
