ELECTRICAL ANTIFUSE, METHOD OF MANUFACTURE AND METHOD OF PROGRAMMING
摘要
<p>An antifuse (100) having a link (125) including a region (150) of unsilicided semiconductor material may be programmed at reduced voltage and current and with reduced generation of heat by electromigration of metal or silicide from a cathode (120) into the region of unsilicided semiconductor material to form an alloy having reduced bulk resistance. The cathode (120) and anode (110) are preferably shaped to control regions from which and to which material is electrically migrated After programming, additional electromigration of material can return the antifuse to a high resistance state. The process by which the antifuse is fabricated is completely compatible with fabrication of field effect transistors and the antifuse may be advantageously formed on isolation structures</p>
申请公布号
WO2008109654(A3)
申请公布日期
2008.11.06
申请号
WO2008US55875
申请日期
2008.03.03
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION;CESTERO, ALBERTO;PARK, BYEONGJU;SAFRAN, JOHN, M.