| 摘要 |
<p>The invention relates to methods for manufacturing compound material wafers, in particular silicon on insulator type wafers, comprising the steps of providing a donor substrate, forming an insulating layer, providing a handle substrate, creating a predetermined splitting area in the donor substrate, attaching the donor substrate to the handle substrate and detaching at the predetermined splitting area to achieve the compound material wafer. In order to be able to more often reuse the remainder of the donor substrate in subsequent manufacturing runs, the invention is characterized by the fact that the insulating layer provided on the donor substrate has a maximum thickness of 500 A, or that the insulating layer is provided by deposition or only on the handle substrate. In addition, a silicon on silicon type wafer fabrication method is also disclosed.</p> |
