| 摘要 |
A nitride semiconductor light emitting device and a manufacturing method thereof are provided to improve the efficiency of light extraction by forming a self-assembled quantum dot layer having a plurality of protruded quantum dots. An n-type semiconductor substrate(102), an active layer(103), and a p-type nitride semiconductor layer(104) are formed on a substrate(101) in turn. A self-assembled quantum dot layer(110) having a plurality of protruded quantum dots is formed on the p-type nitride semiconductor layer. The self-assembled quantum dot layer has a refractive index greater than that of the p-type nitride semiconductor layer. The self-assembled quantum dot layer is made of InGaN. A diameter of the quantum dot in the self-assembled quantum dot layer is 5 to 50 nm, and a height thereof is 1 to 10 nm. Distribution density of the quantum dot in the self-assembled quantum dot layer is 1X10^8 to 1X10^12 cm^-2. |
