FIELD EFFECT TRANSISTOR HAVING GERMANIUM NANOROD AND METHOD OF MANUFACTURING THE SAME

摘要

The field effect transistor and a manufacturing method thereof are provided to increase the driving speed and decrease the driving voltage by equipping the germanium nano-rods in which the mobility is bigger than the silicon as a channel. The field effect transistor(100) includes the gate oxide(130) formed on the substrate(110); germanium nano-rods(140) in which both ends are exposed; the source electrode(151) and the drain electrode(152) connected with the both ends of the germanium nano-rods; the gate electrode(160) formed on the gate oxide between the source electrode and drain electrode. The germanium nano-rods are embedded in the gate oxide.