发明名称 SUBSTRATE TREATMENT APPARATUS
摘要 PROBLEM TO BE SOLVED: To improve in-plane uniformity of plasma treatment on a substrate to be processed. SOLUTION: The substrate treatment apparatus includes: a treatment container having an opening portion 220; gas supplying means; gas exhausting means; substrate holder for holding substrates to be inserted into a treatment chamber 201 through the opening portion; at least one pair of first and second electrodes for plasma generation which are stacked in the substrate holder, with a substrate disposed between each pair of electrodes; rotary shaft 310 for rotatably supporting the substrate holder in the treatment chamber; lid body which rotatably supports the rotary shaft and closes the opening portion; first and second supply lines which are introduced into the treatment chamber through the inside of the rotary shaft and are connected to the first and second electrodes; first and second rotary capacitors 314a and 314b connected to the first and second supply lines extracted outside the treatment chamber; and power supplying means for supplying power of a different phase separately to the first and second electrodes from the first and second rotary capacitors via the first and second supply lines. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008270477(A) 申请公布日期 2008.11.06
申请号 JP20070110513 申请日期 2007.04.19
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 TOYODA KAZUYUKI;SUEYOSHI MAMORU;ITO TAKESHI
分类号 H01L21/3065;H01L21/205 主分类号 H01L21/3065
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