发明名称 |
SUBSTRATE TREATMENT APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To improve in-plane uniformity of plasma treatment on a substrate to be processed. SOLUTION: The substrate treatment apparatus includes: a treatment container having an opening portion 220; gas supplying means; gas exhausting means; substrate holder for holding substrates to be inserted into a treatment chamber 201 through the opening portion; at least one pair of first and second electrodes for plasma generation which are stacked in the substrate holder, with a substrate disposed between each pair of electrodes; rotary shaft 310 for rotatably supporting the substrate holder in the treatment chamber; lid body which rotatably supports the rotary shaft and closes the opening portion; first and second supply lines which are introduced into the treatment chamber through the inside of the rotary shaft and are connected to the first and second electrodes; first and second rotary capacitors 314a and 314b connected to the first and second supply lines extracted outside the treatment chamber; and power supplying means for supplying power of a different phase separately to the first and second electrodes from the first and second rotary capacitors via the first and second supply lines. COPYRIGHT: (C)2009,JPO&INPIT
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申请公布号 |
JP2008270477(A) |
申请公布日期 |
2008.11.06 |
申请号 |
JP20070110513 |
申请日期 |
2007.04.19 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC |
发明人 |
TOYODA KAZUYUKI;SUEYOSHI MAMORU;ITO TAKESHI |
分类号 |
H01L21/3065;H01L21/205 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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