| 摘要 |
A semiconductor laser device 3 includes an n-type clad layer 13 , an active layer 15 , and a p-type clad layer 17 . The p-type clad layer 17 has a ridge portion 9 that forms a waveguide 4 in the active layer 15 . The waveguide 4 extends along a central axial line B that is curved at a substantially constant curvature (curvature radius R). In such a waveguide 4 , of the light components that resonate inside the waveguide 4 , light components of higher spatial transverse mode order are greater in loss. Laser oscillations of high-order transverse modes can thus be suppressed while maintaining laser oscillations of low-order transverse modes. A semiconductor laser device and a semiconductor laser device array, which can emit laser light of comparatively high intensity and with which high-order transverse modes can be suppressed, are thereby realized.
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