HIGHLY RELIABLE GOLD ALLOY BONDING WIRE AND SEMICONDUCTOR DEVICE

摘要

Disclosed is an Au alloy bonding wire which is low in electrical resistance for an Al electrode of a semiconductor device, while being improved in bonding reliability. Also disclosed is a semiconductor device which is connected with an Al electrode pad by such a wire. Specifically disclosed is a gold alloy bonding wire which is characterized by consisting of 0.02-0.3% by mass of Ag, 10-200 ppm by mass of at least one of Ge and Si in total and/or 10-200 ppm by mass of at least one of Al and Cu in total and the balance of Au. Also specifically disclosed is a semiconductor device which is connected with an Al or Al alloy electrode pad by such a gold alloy bonding wire.