RESISTANCE CHANGE ELEMENT AND SEMICONDUCTOR DEVICE INCLUDING IT

摘要

In order to use a resistance change element having an MIM laminate structure of metal/metal oxide/metal as a switch element, an off resistance larger than that required for a memory element by a factor of 1000 or more must be achieved. If the difference between on resistance and off resistance can be increased when a resistance change element is used as a memory element, high performance such as shorter read-out time can be achieved. A resistance change element which achieves a high off resistance while sustaining a low on resistance is provided. A high off resistance can be achieved while sustaining a low on resistance by adding a second metal performing charge compensation of deficient metal or deficient oxygen not included in the metal oxides of resistance change material.