MAGNETORESISTIVE ELEMENT, MRAM, AND MAGNETIC SENSOR

摘要

This invention provides a magnetoresistive element comprising a magnetization fixation layer with fixed magnetization, a magnetization free layer having reversible magnetization, and a tunnel barrier provided between the magnetization fixation layer and the magnetization free layer. The tunnel barrier is crystalline. At least one of the magnetization free layer and the magnetization fixation layer comprises a high spin polarizability layer and a soft ferromagnetic layer. The high spin polarizability layer is adjacent to the tunnel barrier and is formed of a first alloy as an alloy of a ferromagnetic element capable of developing a body-centered cubic lattice structure, or a ferromagnetic material having an amorphous or microcrystalline structure which is a mixture of the first alloy with a nonmagnetic element. The soft ferromagnetic layer is adjacent to the high spin polarizability layer, is located on the opposite side of the tunnel barrier and is formed of a ferromagnetic material having an amorphous or microcrystalline structure, which is a mixture of an alloy of a ferromagnetic element capable of developing a face-centered cubic lattice structure with a nonmagnetic element.