JUNCTION FIELD EFFECT TRANSISTORS IN GERMANIUM AND SILICON-GERMANIUM ALLOYS AND METHOD FOR MAKING AND USING

摘要

Junction field effect transistors (JFET) formed in substrates containing germanium. JFETs having polycrystalline semiconductor surface contacts (562, 530, 560, 532) with self-aligned suicide (580) formed thereon and self-aligned source, drain and gate regions (520, 522,540) formed by thermal drive-in of impurities from surface contacts into the substrate, and implanted link regions (522, 526). Others have a polycrystalline semiconductor gate surface contact and metal back gate, source and drain contacts and a metal surface contact to the gate surface contact with implanted source and drains and a self -aligned gate region. JFETs having a polycrystalline semiconductor gate surface contact and metal back gate, source and drain contacts and a metal surface contact to the- gate surface contact with implanted source and drains and a self-aligned gate region and suicide formed on the top of the source, drain and back gate contacts and on top of the gate polycrystalline semiconductor gate contact to which the metal surface contacts make electrical contact.