METHODS OF FORMING A SEMICONDUCTOR DEVICE INCLUDING A DFFIUSION BARRIER FILM

摘要

Methods for forming a semiconductor device are provided to minimize the diffusion of the thermal agitations of the bottom conductor and the upper part electric conductor which are formed on/under the diffusion barrier film. The formation method of the semiconductor device includes the step of forming interlayer insulating film(102) on the substrate including a bottom conductor; the step of building up the opening which exposes the bottom conductor through the interlayer insulating film; the step of forming diffusion barrier film(120) including the plasma treatment layer and plasma raw layer(110) on the substrate having the opening. The diffusion barrier film is formed of the metal nitride through the metal-organic chemical vapor deposition.