GALLIUM NITRIDE SUBSTRATE AND GALLIUM NITRIDE FILM DEPOSITION METHOD

摘要

A gallium nitride substrate and a gallium nitride film deposition method are provided to decrease the generation rate of the crack of the nitride gallium film. The formation method of the nitride gallium film in which the carrier concentration is 1x10^17cm^p-3 or greater includes: the process of forming the nitride gallium film(51) including N-type dopant on the substrate(50); the process of heating up the nitride gallium film formed in the top of the substrate. The nitride gallium film is heated more than 5 minutes at 800°C or greater.