| 摘要 |
PROBLEM TO BE SOLVED: To provide a normally off type nitride semiconductor field effect transistor small in a gate leakage current. SOLUTION: Undope GaN of 3 mm having the principal surfaces of (11-20) surfaces are formed on a substrate, then, AlN of 1 nm, n-type Al<SB>0.25</SB>Ga<SB>0.75</SB>N of 25 nm and n-type GaN of 50 nm are formed thereon. A Ti/Al source drain electrode is formed on the n-type GaN and a recess, wherein a part of the n-type Al<SB>0.25</SB>Ga<SB>0.75</SB>N is exposed, is formed between the source electrode and the drain electrode. An insulating film is formed on the recess while PdSi is formed in the shape of contacting with the insulating film as a gate electrode 108. Such a structure is obtained whereby the normally off type nitride semiconductor field effect transistor, whose gate leakage current is small, can be manufactured. COPYRIGHT: (C)2009,JPO&INPIT |
