| 摘要 |
PROBLEM TO BE SOLVED: To provide a lateral type IGBT being formed on an SOI board and having a large current density. SOLUTION: A lateral type IGBT structure has an emitter terminal consisting of two or more of second conductivity type base layers to one connector terminal. The lateral type IGBT structure has a configuration coating the second conductivity type base layers in an emitter region with a first conductivity type layer having a concentration higher than that of a drift layer. Accordingly, the resistance of a silicon layer between the first conductivity type layer coating the emitter region and a buried oxide film is lowered, a current to an emitter separated from a collector is increased and the current density is improved. COPYRIGHT: (C)2009,JPO&INPIT
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