GROUP III NITRIDE COMPOUND SEMICONDUCTOR VERTICAL TYPE TRANSISTOR AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a novel group III nitride compound semiconductor vertical type transistor. SOLUTION: An Al/Ti/Pt/Au multiple metal layer 32, an AuSn solder layer 33, an Au/Ni/Al/Ti multiple metal layer 15, an n+contact layer (n+-GaN) 14, and a drift part (n-GaN) 13 are formed on an n-type Si substrate 31. The drift part 13 is provided with a current constriction part 13bn of about 0.5μm in thickness, and an AlN layer 21 and a p layer (p-GaN) 22 are formed on the right and left sides thereof. The uppermost part of the drift part 13 (current constriction part 13 bn) is on the same plane as that of the p layer (p-GaN) 22. A channel layer (n-GaN) 12 and an electron supply layer (AlGaN) 11 are formed thereon. An HEMT 100 is made by epitaxially growing it on a sapphire substrate, adhering it to a silicon substrate and removing the sapphire substrate by the laser lift-off method. COPYRIGHT: (C)2009,JPO&INPIT