| 摘要 |
Method for simulating a response of an electronic circuit containing SOI transistors ( 220 ) and being in a steady state, characterised by the following steps: -creating of a list of transistors ( 220 ); memorising of the signals at the nodes ( 200, 201, 202 ) of each transistor ( 220 ) in the list, when inputs ( 201 ) of said circuit are excited during an established time; for each transistor ( 220 ), independently from the others, analysing a variation of a common electric property when we apply to, at their nodes ( 200, 201, 202 ), said corresponding memorised signals, in relation with a pre-set criterion of this variation; if the criterion is not respected modify once an initial electric environment of each transistor and return to the preceding step; excite the circuit, containing said transistors ( 220 ) with the new electric environment, during said time and check at each said transistor that said criterion is met.
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