NAND flash memory cell array and method of fabricating the same

摘要

A novel NAND flash memory cell array and the method of fabricating the same are disclosed in this invention. The NAND flash memory cell array comprises a substrate with an active area; a plurality of cells arranged in a row on the active area; a first barrier layer covering the cells and the active area around each end of the row; a first oxide deposited to fill a gap between the cells; an oxide spacer formed along the sidewall of a cell located at each end of the row; and a poly spacer formed on the oxide spacer acting as a selection gate for driving the row of cells. The aspect ratio of the gap between the cells is about 1.8 to 3.2. Many advantages are provided with such NAND flash memory fabricating by the self-aligned process of the present invention.