发明名称 Semiconductor Package Having Through-Hole Via on Saw Streets Formed with Partial Saw
摘要 A method of forming through-hole vias in a semiconductor wafer involves forming a semiconductor wafer with many die having contact pads disposed on each die. The semiconductor wafer has saw street guides between each die. A trench is formed in the saw streets. The trench extends partially but not completely through the wafer. The uncut portion of the saw street guides below the trench along a backside of the wafer maintains structural support for the semiconductor wafer. The trench is filled with organic material. Via holes are formed in the organic material. Traces are formed between the contact pads and via holes. Conductive material is deposited in the via holes to form metal vias. The uncut portion of the saw streets below the trench along the backside of the semiconductor wafer portion is removed. The semiconductor wafer is singulated along the saw street guides to separate the die.
申请公布号 US2008274603(A1) 申请公布日期 2008.11.06
申请号 US20070861233 申请日期 2007.09.25
申请人 STATS CHIPPAC, LTD. 发明人 DO BYUNG TAI;KUAN HEAP HOE;CHUA LINDA PEI EE
分类号 H01L21/30 主分类号 H01L21/30
代理机构 代理人
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