| 摘要 |
A semiconductor device and method of manufacturing the same are provided. According to certain embodiments, a device layer structure can be formed above a metal wiring line by using a stepped portion of the wiring line as an alignment key. The stepped portion can be provided by a height difference between a first insulating layer and the metal wiring line formed in a trench of the first insulating layer. In one embodiment, the stepped portion can be formed by removing a thickness from a top surface of the first insulating layer after forming the metal wiring line in the trench.
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