| 发明名称 |
METHODS OF FORMING ELECTRONIC DEVICES CONTAINING Zr-Sn-Ti-O FILMS |
| 摘要 |
A dielectric film containing Zr-Sn-Ti-O and methods of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO<SUB>2</SUB>. Films of Zr-Sn-Ti-O may be formed in a self-limiting growth process.
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| 申请公布号 |
US2008274625(A1) |
申请公布日期 |
2008.11.06 |
| 申请号 |
US20080171711 |
申请日期 |
2008.07.11 |
| 申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
AHN KIE Y.;FORBES LEONARD |
| 分类号 |
H01L21/31;C23C16/40;C23C16/44;C23C16/455;H01L21/28;H01L21/314;H01L21/316;H01L21/8238;H01L29/51 |
主分类号 |
H01L21/31 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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